Award

Molecular beam epitaxy for seminconductor wafer development

Semiconductors have had an unprecedentedimpact on our lives, largely because theindustry has steadily delivered exponentialincreases in performance without an increasein expenditures. That trend is now at risk.Finding and implementing a solution in thequest for cost-effective nanoscalesemiconductors has been the mission of a teamfrom PNNL.The Molecular Beam Epitaxy (MBE) systemuses multiple atomic beams to grow well-defined, controlled layers of materials forstudying film and interface properties.Advanced MBE technology has the potentialto revolutionize semiconductor design andprocessing through the creation of advancedmaterials with properties that can be tailored tospecific applications.The PNNL team’s technology transfer partnerwas Motorola Labs. A full range ofmechanisms was used to accomplish thetransfer, including a user facility agreement,procurement of the system, and a CRADA. Asa result of the partnership, Motorola now hasan enhanced MBE instrument system and thescientific and technical knowledge to gainmaximum benefit from the technology. Thissystem is giving the company a competitiveedge by enabling its researchers to solvecritical problems in the development ofnanoscale components for advanced electronicproducts and services for industry, consumers,and national defense.
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Far West